作者简介：
Govindhan Dhanaraj is the Manager of Crystal Growth Technologies at Advanced Renewable Energy Company （ARC Energy） at Nashua， New Hampshire （USA） focusing on the growth of large size sapphire crystals for LED lighting applications， characterization and related crystal growth furnace development. He received his PhD from the Indian Institute of Science， Bangalore and his Master of Science from Anna University （India）. Immediately after his doctoral degree， Dr. Dhanaraj joined a National Laboratory， presently known as Rajaramanna Center for Advanced Technology in India， where he established an advanced Crystal Growth Laboratory for the growth of optical and laser crystals. Prior to joining ARC Energy， Dr. Dhanaraj served as a Research Professor at the Department of Materials Science and Engineering， Stony Brook University， NY， and also held a position of Research Assistant Professor at Hampton University， VA. During his 25 years of focused expertise in crystal growth research， he has developed optical， laser and semiconductor bulk crystals and SiC epitaxial films using solution， flux， Czochralski， Bridgeman， gel and vapor methods， and characterized them using x-ray topography， synchrotron topography， chemical etching and optical and atomic force microscopic techniques. He co-organized a symposium on Industrial Crystal Growth under the 17th American Conference on Crystal Growth and Epitaxy in conjunction with the 14th US Biennial Workshop on Organometallic Vapor Phase Epitaxy held at Lake Geneva， WIin 2009. Dr. Dhanaraj has delivered invited lectures and also served as session chairman in many crystal growth and materials science meetings. He has published over 100 papers and his research articles have attracted over 250 rich citations.
内容简介：
《Springer手册精选系列·晶体生长手册（第1册）：晶体生长及缺陷形成概论（影印版）》介绍基础理论：生长和表征技术综述，表面成核工艺，溶液生长晶体的形态，生长过程中成核的层错，缺陷形成的形态。
目录：
缩略语
PartA 晶体生长基础及缺陷形成
1.晶体生长技术和表征：综述
1.1 发展历史
1.2 晶体生长理论
1.3 晶体生长技术
1.4 晶体缺陷及表征
参考文献
2.表面成核
2.1 晶体环境相平衡
2.2 晶核形成及工作机理
2.3 成核率
2.4 饱和晶核密度
2.5 在同质外延中的第二层成核
2.6 异质外延中的聚集机理
2.7 表面活性剂对成核的影响
2.8 结论与展望
参考文献
3.溶液中的晶体生长形态
3.1 相平衡
3.2 晶体的生长相理论
3.3 影响晶体特性的因素
3.4 表面结构
3.5 晶体缺陷
3.6 成核动力学——过饱和
3.7 溶剂
3.8 杂质
3.9 其他因素
3.1 0晶体特性变化过程
3.1 1小结
3.A附录
参考文献
4.晶体生长过程中缺陷的生长及演变
4.1 综述
4.2 包晶：
4.3 条纹和生长区
4.4 位错
4.5 孪晶
4.6 溶液中快速生长完整晶体
参考文献
5.没有约束条件下的单晶生长
5.1 背景
5.2 光滑和粗糙的接触面：生长机理和形态学
5.3 表面微形貌
5.4 多面体材料晶体的生长形貌
5.5 内部形态
5.6 完整单晶
参考文献
6.熔体生长晶体期间缺陷的形成
6.1 综述
6.2 点缺陷
6.3 位错
6.4 第二相粒子
6.5 面缺陷
6.6 孪晶
6.7 总结
参考文献
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